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High-k Gate Dielectric Materials
Engelsk Paperback
SPAR
kr 156
High-k Gate Dielectric Materials
Engelsk Paperback

This volume explores and addresses the challenges of high-k gate dielectric materials, one of the major concerns in the evolving semiconductor industry and the International Technology Roadmap for Semiconductors (ITRS). The application of high-k gate dielectric materials is a promising strategy that allows further miniaturization of microelectronic components.

This book presents a broad review of SiO2 materials, including a brief historical note of Moore’s law, followed by reliability issues of the SiO2 based MOS transistor. It goes on to discuss the transition of gate dielectrics with an EOT ~ 1 nm and a selection of high-k materials. A review of the various deposition techniques of different high-k films is also discussed. High-k dielectrics theories (quantum tunneling effects and interface engineering theory) and  applications of different novel MOSFET structures, like tunneling FET, are also covered in this book.

The volume also looks at the important issues in the future of CMOS technology and presents an analysis of interface charge densities with the high-k material tantalum pentoxide. The issue of CMOS VLSI technology with the high-k gate dielectric materials is covered as is the advanced MOSFET structure, with its working structure and modeling.

This timely volume will prove to be a valuable resource on both the fundamentals and the successful integration of high-k dielectric materials in future IC technology.

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This volume explores and addresses the challenges of high-k gate dielectric materials, one of the major concerns in the evolving semiconductor industry and the International Technology Roadmap for Semiconductors (ITRS). The application of high-k gate dielectric materials is a promising strategy that allows further miniaturization of microelectronic components.

This book presents a broad review of SiO2 materials, including a brief historical note of Moore’s law, followed by reliability issues of the SiO2 based MOS transistor. It goes on to discuss the transition of gate dielectrics with an EOT ~ 1 nm and a selection of high-k materials. A review of the various deposition techniques of different high-k films is also discussed. High-k dielectrics theories (quantum tunneling effects and interface engineering theory) and  applications of different novel MOSFET structures, like tunneling FET, are also covered in this book.

The volume also looks at the important issues in the future of CMOS technology and presents an analysis of interface charge densities with the high-k material tantalum pentoxide. The issue of CMOS VLSI technology with the high-k gate dielectric materials is covered as is the advanced MOSFET structure, with its working structure and modeling.

This timely volume will prove to be a valuable resource on both the fundamentals and the successful integration of high-k dielectric materials in future IC technology.

Produktdetaljer
Sprog: Engelsk
Sider: 264
ISBN-13: 9781774638859
Indbinding: Paperback
Udgave:
ISBN-10: 1774638851
Udg. Dato: 1 jul 2022
Længde: 18mm
Bredde: 151mm
Højde: 228mm
Oplagsdato: 1 jul 2022
Forfatter(e):
Forfatter(e)


Kategori Elektronisk udstyr og materialer


Sprog Engelsk


Indbinding Paperback


Sider 264


Udgave


Længde 18mm


Bredde 151mm


Højde 228mm

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